Spec
Si Avalanche Photodetectors
Features
- Noise Equivalent Powers (NEP) as Low as 2.5 fW/√Hz
- Max Bandwidth up to 1 GHz at 3 dB
- Temperature-Compensated Versions Provide M Factor Stability of ≤±3% Over 18 to 28 °C
- Variable Gain Detectors Available: M Factor from 5 to 50 or 10 to 100
- Internal SM05 and External SM1 Threading for Lens Tubes
- Power Supply Included
| Model | Description | Download |
|---|---|---|
| APD410 | Si Variable-Gain Avalanche Detector, Temperature Compensated, 200 – 1000 nm, 1 – 1600 MHz, M4 Tap |  |
| APD210 | Si Variable-Gain Avalanche Detector, Temperature Compensated, 400 – 1000 nm, 1 – 1600 MHz, M4 Tap | |
| APD130A2/M | Si Avalanche Photodetector, Temperature Compensated, UV Enhanced, 200 – 1000 nm, M4 Taps | |
| APD130A/M | Si Avalanche Photodetector, Temperature Compensated, 400 – 1000 nm, M4 Taps | |
| APD440A | Si Variable-Gain Avalanche Detector, Temperature Compensated, 400 – 1000 nm, DC – 100 kHz, Universal 8-32 / M4 Taps | |
| APD440A2 | Si Variable-Gain Avalanche Detector, Temperature Compensated, 200 – 1000 nm, DC – 100 kHz, Universal 8-32 / M4 Taps | |
| APD410A2/M | Si Variable-Gain Avalanche Detector, Temperature Compensated, UV Enhanced, 200 – 1000 nm, DC – 10 MHz, M4 Taps | |
| APD430A2/M | Si Variable-Gain Avalanche Detector, Temperature Compensated, UV Enhanced, 200 – 1000 nm, DC – 400 MHz, M4 Taps | |
| APD410A/M | Si Variable-Gain Avalanche Detector, Temperature Compensated, 400 – 1000 nm, DC – 10 MHz, M4 Taps | |
| APD430A/M | Si Variable-Gain Avalanche Detector, Temperature Compensated, 400 – 1000 nm, DC – 400 MHz, M4 Taps | |
InGaAs Avalanche Photodetectors
- Noise Equivalent Powers (NEP) as Low as 0.12 pW/√Hz
- Max Bandwidth up to 1.6 GHz at 3 dB
- Temperature-Compensated Versions Provide M Factor Stability of ≤±3% Over 18 to 28 °C
- Variable Gain Detectors Available: M Factor from 4 to 20 or 2 to 10
- Internal SM05 and External SM1 Threading for Lens Tubes
- Power Supply Included
| Model | Description | Download |
|---|---|---|
| APD130C/M | •InGaAs Avalanche Photodetector, Temperature Compensated, 900 – 1700 nm, M4 Taps | |
| APD450C | InGaAs Variable-Gain Avalanche Photodetector, Temperature Compensated, 1260 – 1620 nm, 0.3 – 1600 MHz, Universal 8-32 / M4 Taps | |
| APD410C/M | InGaAs Variable-Gain Avalanche Photodetector, Temperature Compensated, 900 – 1700 nm, DC – 10 MHz, M4 Taps | |
| APD430C/M | InGaAs Variable-Gain Avalanche Photodetector, Temperature Compensated, 900 – 1700 nm, DC – 400 MHz, M4 Taps | |
| APD310 | InGaAs Variable-Gain Avalanche Photodetector, Temperature Compensated, 850 – 1650 nm, 1 – 1600 MHz, M4 Tap | |
